SOI芯片光电探测器阵列
SOI Chip-based Photodetector Array
SOI芯片式光电探测器阵列，该产品基于硅基锗-硅光电探测器，实现了多通道光电探测器的单片化集成，可片上集成光学混频器，芯片尺寸小，集成度高，偏振相关性小，模拟带宽大，可提供裸片或光电一体化封装产品方案。
Chip-based multi-channel photodetector array is a product based on Ge-Si SOI platform. This product achieved the integration of multi-channel photodetectors on a single SOI chip. The MMI-based optical hybrider/mixer could also be integrated on the chip. It is capable of tiny polarization sensitivity and large electrical bandwidth. Both the die products and chip package solutions are provided.
〖性能指标Specifications〗
参数指标Parameters 单位Unit 最小值Min. 典型值Typ. 最大值Max. 备注Notes
波长范围 Wavelength range nm 1530—1570 nm or 1270nm—1330 nm
暗电流Dark current nA 35 50
3 dB模拟带宽 3 dB bandwidth GHz 28
光饱和功率 Optical saturation power mW 10
响应度 Responsibility A/W 0.8 0.85
90度光学混频器损耗 90°mixer loss dB 6 6.5 6.7
90度光学混频器相位失衡度 90°mixer phase unbalance ° 5
通道数 Number of channels 8或可定制8 or Can be customized
光纤接入损耗Insertion loss dB ≤0.5
偏振相关损耗PDL dB ≤0.3
工作温度范围Operating temperature range °C -20 50
工作湿度范围Operating humidity range % +65
芯片尺寸Chip Dimensions mm 4(L)×5(W)×0.5(H)
SOI Chip-based Photodetector Array
SOI芯片式光电探测器阵列，该产品基于硅基锗-硅光电探测器，实现了多通道光电探测器的单片化集成，可片上集成光学混频器，芯片尺寸小，集成度高，偏振相关性小，模拟带宽大，可提供裸片或光电一体化封装产品方案。
Chip-based multi-channel photodetector array is a product based on Ge-Si SOI platform. This product achieved the integration of multi-channel photodetectors on a single SOI chip. The MMI-based optical hybrider/mixer could also be integrated on the chip. It is capable of tiny polarization sensitivity and large electrical bandwidth. Both the die products and chip package solutions are provided.
〖性能指标Specifications〗
参数指标Parameters 单位Unit 最小值Min. 典型值Typ. 最大值Max. 备注Notes
波长范围 Wavelength range nm 1530—1570 nm or 1270nm—1330 nm
暗电流Dark current nA 35 50
3 dB模拟带宽 3 dB bandwidth GHz 28
光饱和功率 Optical saturation power mW 10
响应度 Responsibility A/W 0.8 0.85
90度光学混频器损耗 90°mixer loss dB 6 6.5 6.7
90度光学混频器相位失衡度 90°mixer phase unbalance ° 5
通道数 Number of channels 8或可定制8 or Can be customized
光纤接入损耗Insertion loss dB ≤0.5
偏振相关损耗PDL dB ≤0.3
工作温度范围Operating temperature range °C -20 50
工作湿度范围Operating humidity range % +65
芯片尺寸Chip Dimensions mm 4(L)×5(W)×0.5(H)
